| 1 | Marina Baidakova, S.G. Konnikov, R.N. Kyutt, A.V. Krupin, N.S. Sokolov | X-ray diffraction characterization of MBE-grown CaF2-CdF2 superlattices on Si(111) ...more |
| 2 | Anis Saad, Alexander Fedotov, Anatoly Frantskevich, Alexander Mazanik, Natalya Frantskevich, Alexy Patryn | Study of vertical nanotubes formed in silicon wafers by SEM, RBS and SIMS methods ...more |
| 3 | Frank Fenske, Michael Hietschold, M. Schmidbauer, Steffen Schulze | Structural characterization of homoepitaxial layers on Si(111) grown by pulsed magnetron sputtering at low temperature ...more |
| 4 | Aleksy PATRYN, Grzegorz ILECZKO, Nikolaj DROZDOV, Olga ZINCHUK | Surface Photovoltage in Si - Phenomenological Propierties ...more |
| 5 | Andrzej Misiuk, Wojciech Jung, Marek Prujszczyk, Edward A. Steinman , Konstantin S. Zhuravlev, Jadwiga Bak-Misiuk | Dislocation-related photoluminescence from processed Si ...more |
| 6 | Abdi M. Amir, Djeffal Fayçal, Hafiane M. Lamine, Arar Djemai | Numerical analysis of Double Gate and Gate All Around MOSFETs with Bulk Trap States ...more |
| 7 | Nurzhan Beisenkhanov, Kair Nussupov, Konstantin Mit', Yelena Dmitriyeva, Daniya Mukhamedshina, Irina Valitova | Structural properties of carbon implanted silicon layers ...more |
| 8 | Lee Chow, J. C. Gonzales, E. Del Barco, R. Vanfleet, A. Misiuk, G Chai | Micro-structures and Magnetism in Cr implanted Silicon ...more |
| 9 | Andreas Danilewsky, Alexander Rack, Timm Weitkamp, Rolf Simon, Patrick McNally | White Beam Topography of 300 mm Si - Wafers ...more |
| 10 | Ekaterina Kolesnikova, Evgeniy Mukchin, Vladimir Sokolov, Maria Zamoryanskaya | Study of radiation defects in amorphous silicon dioxide by local cathodoluminescence. ...more |
| 11 | Nikolay Drozdov, Alexander Fedotov, Svetlana Kobeleva, Alexander Mazanik, Alexy Patryn, Vladimir Pilipenko, Alexander Pushkarchuk, Olga Zinchuk | Formation of insulating oxygen-containing layer on the silicon wafer surface using low-temperature hydrogenation ...more |
| 13 | Shinya Yamazaki, yasunori Goto, Ryuzou Tagami, Takahide Sugiyama | Carbon-related defects in Helium irradiated silicon ...more |
| 14 | Vladimir Privezentsev, Eugene Yakimov | EBIC investigation of the silicon, compensated by zinc during high temperature diffusion annealing ...more |
| 15 | Charbel Zgheib, Richard Nader, Pierre Masri, F. Miguel Morales, Jorg Pezoldt | Germanium presence at the 3C-SiC/Si interface: location and distribution ...more |
| 16 | Kenichiro Takakura, Yuya Aoki, Kiyoteru Hayama, Hidenori Ohyama, Eddy Simoen, Cor Claeys | Electrical properties of strained Si MOSFETs by high-fluence electron-irradiation ...more |
| 17 | Yutaka Tokuda, Takeshi Seo | Deep-level transient spectroscopy study of transformation behavior of a metastable defect labeled EM3 in hydrogen-implanted n-type silicon ...more |
| 18 | Gianfranco Claudio, Sonia Calnan, Kevin Bass, Matt Boreland | Optical characterisation of silicon nitride thin films grown by novel remote plasma sputter deposition ...more |
| 19 | C. Frigeri, M. Serényi, L. Nasi, A. Csik, Z. Erdélyi, D. L. Beke | Comparison between amorphous Si/Ge and H-Si/Ge multilayers submitted to heat treatments ...more |
| 20 | Masayoshi Yamada, M. R. Islam | Raman scattering characterization of composition in bulk Si1-xGex under compositional variation ...more |
| 21 | Kenji Yoshino, Minoru Yoneta | Photoluminescence Characterization of High Quality Conductive ZnSe Single Crystal ...more |
| 22 | Masahiro Adachi, Michio Tajima, Yutaka Hashimoto, Katsuhisa Kanzaki, Syuji Ohashi, Hiroyasu Morita, Tomoki Abe, Hirofumi Kasada, Koshi Ando | A new method to control defect reaction induced by electron hole recombination for long lived widegap light emitting devices ...more |
| 23 | Mariaconcetta Canino, Anna Cavallini, Antonella Poggi, Roberta Nipoti | Preparation of Ni2Si contacts: effect on SiC diode operation ...more |
| 24 | Cesare Frigeri, Giovanni Attolini, Matteo Bosi, Bernard Watts | Characterisation of 3C-SiC grown on Si substrates with different conductivity ...more |
| 25 | Alexey Shakhmin, Irina Sedova, Sergey Sorokin, Vladimir Sokolov, Maria Zamoryanskaya | ZnSe based films characterization by local cathodoluminescence ...more |
| 26 | Y. Ortega, P Fernandes, Javier Piqueras | Cathodoluminescence of Sn doped ZnO nano- and microstructures ...more |
| 27 | Benjamin Dierre, Xiaoli Yuan, Yongzhao Yao, Masaaki Yokoyama, Takashi Sekiguchi | Variation of the cathodoluminescence intensity during electron beam irradiation for ZnO and GaN ...more |
| 28 | Ramunas Aleksiejunas, Vladimir Gavryushin, Arunas Kadys, Kestutis Jarasiunas | Correlation between free carrier lifetime and concentration of point defects in ZnO crystals ...more |
| 29 | Qunhe Xu, Changjie Zhou, Junyong Kang | Optimization of acceptor candidate among Li-related defects in ZnO ...more |
| 30 | Mohamed Ali Lahmer, Kamel Guergouri | Theoretical study of the properties of Zn related defects in ZnO ...more |
| 31 | lahmer mohamed ali, guergouri kamel | Theoretical study of Vacancies properties in ZnO ...more |
| 34 | Mahmood Sabooni, Morteza Esmaeili, Hamid Haratizadeh, Bo Monemar, Hiroshi Amano | Dynamical study of the radiative recombination processes in GaN/AlGaN QWs ...more |
| 35 | Yana Domracheva, Valentin Jmerik, Tatiana Popova, Maria Zamoryanskaya | Cathodoluminescence of InxGa1-xN epilayers ...more |
| 36 | Shigeyasu Tanaka, Mikio Ichihashi, Shigeo Arai, Kentaro Aoyama, Yoshio Honda, Nobuhiko Sawaki | EBIC investigation of GaN/AlGaN/Si heterostructures using scanning transmission electron microscopy ...more |
| 37 | Demid Kirilenko, Alla Sitnikova, Samuil Konnikov, Marina Mynbaeva, Maxim Odnobludov, Vladislav Bugrov, Teemu Lang | TEM study of structure of GaN epilayers grown on substrates with various surfaces reliefs ...more |
| 38 | Steve Schmerler, Torsten Hahn, Sabrina Hahn, Jürgen Niklas, Bianca Gründig-Wendrock | Explanation of positive and negative PICTS peaks in SI-GaAs by generalized rate equation system ...more |
| 39 | Jan Grym, Olga Prochazkova , Jiri Zavadil , Karel Zdansky | InP layers grown from Pr treated melts ...more |
| 40 | Vilmos Rakovics, Sándor Püspöki, István Réti | Output power saturation in InGaAsP-InP surface emitting LED's ...more |
| 41 | Ladislav Pekarek, Karel Zdansky | Charecterization of indium phosphide single crystals for the X-ray detection ...more |
| 44 | Paola Altieri-Weimar, Thomas Lutz, Arndt Jaeger, Peter Stauss, Klaus Streubel, Klaus Thonke, Rolf Sauer | Influence of doping on the reliability of AlGaInP LEDs ...more |
| 45 | Ullrich Pietsch, Björn Brüser, Tobias Panzner, Suren Grigorian, Ute Zeimer, Jörg Grenzer | High Resolution Measurement of the Thermal Expansion Coefficient of Semiconductor Multilayer Lateral Nanostructures ...more |
| 46 | Martin Naumann, Martin Albrecht, Peter Rudolph, Roberto Fornari, Stefan Eichler, Czygan Scheffer | Origin of residual dislocations in GaAs single crystals ...more |
| 47 | Uta Juda, Christiane Frank-Rotsch, Peter Rudolph | Analysis of dislocation cell patterns in as-grown compound materials (GaAs, CaF2) ...more |
| 49 | Hans Berger, H. - A. Bradaczek, H. Bradaczek | Omega-Scan – an X-Ray Tool for the Characterization of Crystal Properties ...more |
| 51 | Stanislaw Jankowski, Janusz Bedkowski, Zbigniew Szymanski, Pawel Kaminski, Roman Kozlowski, Michal Pawlowski | Application of computational intelligence to analysis of PITS spectral images for defect centres in semi-insulating materials ...more |
| 53 | Shigeyasu Tanaka, Mikio Ichihashi, Hiroki Tanaka, Tadahiro Kawasaki, Takayoshi Tanji, Koji Arafune, Yoshio Ohshita, Yamaguchi Masafumi | EBIC imaging using scanning transmission electron microscopy - experiment and analysis - ...more |
| 54 | Maria Zamorynskay, samuil konnikov | Local Cathodoluminescence study of the semiconductors and nanostructures ...more |
| 55 | Kenji Yoshino, Hitoshi Matsuo, Makoto Yamauchi, Kouji Morimoto | Chatacterization of Proton irradiated AgInSe2 Thin Film ...more |
| 56 | Qihui Wu | The Effect of Oxigen Vacancies ...more |
| 57 | Andrey Odrinski, Alexander Fedotov, Mikhail Tivanov, Nikolay Drozdov, Alexy Patryn, Elena Zaretskaya, Valery Gremenok, Valery Zalesski | Investigation of near surface and interface defects in Cu(In,Ga)Se2 films using contactless surface photovoltage decay technique ...more |
| 58 | Alexander Trofimov, Marina Petrova, Maria Zamoryanskaya | Cathodoluminescence of yttrium alluminium garnet doped with Eu2+ and Eu3+ ions ...more |
| 61 | Nazia Kesri, Kamel Sedda | Optical energy gap variation of tin oxide thin films with deposition parameters ...more |
| 62 | Marie Matuchova, Karel Zdansky, Jiri Zavadil, Andreas Danilewsky, Mahmoud Hassan , Dimitri Alexiev | Electrical, optical and structural properties of lead iodide ...more |
| 63 | Lucia Nasi, C. Bocchi, A. Catellani, F. Germini | Defect-induced phase transition from zinc-blende to rocksalt in MBE grown MgS ...more |
| 64 | Orest Malyk | Heavy-hole scattering on the short-range potential of the crystal defect in narrow gap CdHgTe solid solution ...more |
| 65 | Peethambaram Prabukanthan, K Asokan, Ramasamy Dhanasekaran | Effect of 80 MeV Au8+ ions irradiation on CuInTe2 single crystals ...more |
| 66 | Carmen Ruiz Herrero, Edgardo Saucedo Silva, Jan Franc, Petr Horodiskyi, Hassan El Haididy, Mykola Sochinskyi, Veronica Bermudez | Investigation of the origin of deep levels in CdTe doped with Bi ...more |
| 67 | Volodymyr Kosyak, Maksum Kolesnik, Anatoliy Opanasyuk | Point defect structure in CdTe and ZnTe thin films ...more |
| 68 | Daniya Mukhamedshina, Konstantin Mit', Nurzhan Beisenkhanov, Yelena Dmitriyeva, Irina Valitova | Influence of plasma treatments on the microctructure and electrophysical properties of SnOx thin films synthesized by magnetron sputtering and sol-gel technique ...more |
| 69 | Yoshitaka Nakano, Koji Noda, Hisayoshi Fujikawa, Takeshi Morikawa | Interfacial Electronic States of Alq3/a-NPD-Based OLEDs Studied by Deep-Level Optical Spectroscopy ...more |
| 70 | Yoshitaka Nakano, Koji Noda, Hisayoshi Fujikawa, Takeshi Morikawa | Deep-Level Characterization of Tris(8-Hydroxyquiniline) Aluminum with and without Quinacridone Doping ...more |
