DRIP XII  Berlin

12th International Conference on
Defects-Recognition, Imaging
and Physics in Semiconductors

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Sunday, 09.09.2007

TimeCourtyard by Marriott
1500Conference desk open for check in
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30Welcome dinner (buffet)
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Monday, 10.09.2007

TimeCourtyard by Marriott
0830Official Welcome to DRIP12
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"Silicon Devices"

Invited: Eicke R. Weber: Defects issues in silicon photovoltaics ...more
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15Klaus Ramspeck, Karsten Bothe, Jan Schmidt, Peter Pohl, Rolf Brendel: Correlation between the spatially resolved solar cell efficiency and carrier lifetime of multicrystalline silicon ...more
30Guobin Jia, Winfred Seifert, Martin Kittler: Infrared light emission from porous silicon ...more
45J. Grant, C. Buttar, Mike Brozel, A. Keffous, A. Cheriet, K Bourenane, F. Kezzoula, H Menari: Investigation of lithium drifting in Silicon for the passivation of defects generated in harsh radiation environments ...more
1000Coffee Break
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"Defects in Group IV-Materials I"

Invited: Hiroshi Yamada-Kaneta, Terutaka Goto, Yuichi Nemoto, Koji Sato, Masataka Hikin, Yasuhiro Saito, Shintaro Nakamura: Vacancies in as-grown CZ silicon crystals observed by low-temperature ultrasonic measurements ...more
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1100Jan Vanhellemont, Marc Meuris, Krzysztof Mlynarczyk, Piotr Spiewak, Wim Geens, Igor Romandic: On the characterisation of grown-in defects in Cz Si and Ge ...more
15Yang Deren, Wang Weiyan, Que Duanlin: Effect of point defects on the recombination activity of Cu precipitates in Czochralski silicon ...more
30Alexander Ulyashin, Andrzej Misiuk, Barbara Surma, A. Wnuk, Jens Christensen, W. Jung, M. Prujszzuk: Low-temperature photoluminescence investigations of He+ implanted and Deuterium plasma treated crystalline Silicon ...more
45Jörg Grenzer, Arndt Mücklich, Souren Grigorian, Andreas Biermanns, Tapas Chini, Milan Sanyal, Ullrich Pietsch: Ripple structures at top surfaces and underlying crystalline layers induced by ion beam erosion in silicon ...more
1200Vladimir Akhmetov: Radially non-uniform interaction of nitrogen with silicon wafers ...more
15Antti Haarahiltunen, Heli Talvitie, Marko Yli-Koski, Hele Savin, Olli Anttila, Juha Sinkkonen: Gettering of iron in silicon by boron implantation ...more
30Lunch
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"Non-polar GaN and GaN-based devices"

Invited: James Speck: Extented defects and defect reduction in nonpolar GaN ...more
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1400Jonathan Hollander, Menno Kappers, Clifford McAleese, Carol Johnston, Colin Humphreys: Defect characterization in non- and semi-polar GaN ...more
15Tim Wernicke, Ute Zeimer, Martin Herms, Markus Weyers, Michael Kneissl, Gert Irmer: Micro structure of a-plane (2-1-10) GaN ELOG stripe patterns with different in plane orientation ...more
30Gert Irmer, Thomas Brumme, Martin Herms, Tim Wernicke, Michael Kneissl, Markus Weyers: Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering ...more
45De-Sheng Jiang, Uwe Jahn, D. Y. Li, J. J. Zhu, D. G. Zhao, Z. S. Liu, H Yang, K. Ploog: Cathodoluminescence study of GaN-based film structures ...more
1500Sonia Gnanapragasam, Eberhard Richter, Frank Brunner, Andrea Denker, Richard Lossy, Michael Mai, Friedrich Lenk, Jörg Opitz-Coutureau, Gerhard Pensl, Jens Schmidt, Ute Zeimer, Lijun Wang, Christoph Cobet, Norbert Esser, Kirshnan Baskar, Markus Weyers, Hans-Joachim Würfl, Günther Tränkle: Irradiation effects on AlGaN HFET devices and GaN layers ...more
15Martin Herms, Thomas Behm, Gert Irmer, Gnanapragasam Sonia, Ute Zeimer, Frank Brunner, Eberhard Richter, Andrea Denker, J. Opitz-Coutureau, Markus Weyers, Günther Tränkle: Study of in-depth strain variation in ion-irradiated GaN ...more
30Coffee Break
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"Advanced analytical methods and devices"

Invited: Tonio Buonassisi: Defect Imaging in Industrial Multicrystalline Silicon Solar Cells ...more
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30Lu Xu, Patrick McNally: Non-destructive analysis of wafer bonding defects using ultra-fast laser scanning photothermal microscopy (PTM) ...more
45Piotr Edelman, Marshall Wilson, John D'Amico, Alexandre Savtchouk, Jacek Lagowski: Band Offset Diagnostics of Advanced Dielectrics ...more
1700Torsten Hahn, Steve Schmerler, Sabrina Hahn, Kathrin Niemietz, Kay Dornich, Jürgen Niklas, Bianca Gründig-Wendrock: Interpretation of lifetime and defect spectroscopy measurements by generalized rate equations ...more
15Masayuki Fukuzawa, Masayoshi Yamada: Photoelastic strain measurement in GaP (100) wafers under external stresses ...more
30Yves Josse, Chih Wen Lee, Cedric Renaud, Thien Phap Nguyen: Investigation of defects in polyhedral oligomeric silsesquioxanes based organic light emitting diodes ...more
45Nguyen Thien phap, Renaud Cedric, Huang Chun Hao, Lee Chih Wen: Effect of aging on the defect states in organic semiconductors ...more
1800
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Tuesday, 11.09.2007

TimeCourtyard by Marriott
0830

"Defects in Nitrides"

Invited: M. J. Kappers, R. A. Oliver, M. A. Moram , C. J. Humphreys: The origin and reduction of dislocations in gallium nitride ...more
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0900Jan Weyher, Martin Albrecht, Tadeusz Wosinski, Izabella Grzegory: Complementary study of dislocations in GaN using spectral CL and defect-selective etching methods ...more
15Xiaohong Chen, Shuping Li, Junyong Kang: Influence of screw dislocation on surface morphology of AlN epilayers grown by MOCVD ...more
30Tobias Schulz, Martin Albrecht, Klaus Irmscher : Thermoluminescence of wide bandgap semiconductors in a scanning electron microscope ...more
45Esperanza Luna, Alvaro Guzman, Fumitaro Ishikawa, Achim Trampert, Klaus H. Ploog: Effect of Sb on the morphological instabilities of (Ga,In)(N,As) quantum wells grown by molecular beam epitaxy ...more
1000Coffee Break
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"New Developments in III-V Materials"

Invited: Mark Goorsky, S. L. Poust, M. Jackson, M. B. Joshi: Heterogeneous integration using III-V compound semiconductors for solar and electronic applications ...more
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1100Ullrich Pietsch, Andreas Biermanns, Jörg Grenzer, Volker Gottschalch: Strain relaxation at the hetero-interface between free-standing InAs nanorods and GaAs[111B] substrate ...more
15Lucia Nasi, C. Bocci, F Germini, M. Prezioso, J. K. Morrod: Defects in nanostructures with ripened InAs/GaAs quantum dots ...more
30Maria Kaniewska, Olof Engstrom: Thermal instability of electron traps in InAs/GaAs quantum dot structures ...more
45Cesare Frigeri, Giovanni Attolini, Matteo Bosi , Fabrizio Germini, Claudio Pelosi: Detection of the Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP/GaAs by the Dark Field Method ...more
1200Tadeusz Wosinski, Tadeusz Figielski, Andrzej Morawski, Andrzej Makosa, Viktor Osinniy, Jerzy Wrobel, Janusz Sadowski: Domain-wall induced magneto-resistive memory in ferromagnetic (Ga,Mn)As nanostructures ...more
15Kerstin Volz, Igor Nemeth, Bernardette Kunert, Wolfgang Stolz: Characterization of Antiphase Domains in heteroepitaxial GaP/Si and GaAs/Ge ...more
30Lunch
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"Defects in Group IV Materials II"

Invited: Abdelmadjid Mesli: Point defects in SiGe alloys: structural guessing based on electronic transition analysis ...more
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1400Yasuto Kakemura, Kosemura Daisuke, Yoshida Tetsuya, Ogura Atsushi, Masaki Miyuki, Nishida Kenichirou, Kawakami Ryusuke, Yamamoto Naoya: Evaluation of poly-Si thin film crystallized by solid green laser annealing using UV/Visible Raman spectroscopy ...more
15Hiroki Sugimoto, Michio Tajima: Ultra High-Speed Characterization of Multicrystalline Si Wafers by Photoluminescence Imaging with HF Immersion ...more
30Masaaki Inoue, Hiroki Sugimoto, Michio Tajima, Yoshio Ohshita: Microscopic and spectroscopic mapping of dislocation-related photoluminescence in multicrystalline silicon wafers ...more
45Keisuke Sato, Kenji Hirakuri: Luminescent state evaluation of nanocrystalline silicon particles studied by light-irradiated ESR method ...more
1500Kristian Schulz, Marc Herden, Hans Dieter Geiler: Laser-induced SiOx-Nucleation in 300mm SOI-wafer analyzed by use of photoelastic imaging ...more
15Khomenkova Larysa, Baran Mykola, Korsunska Nadiia, Stara Tetyana , Bulakh Borys, Goldstein Yehuda, Savir Ester, Jedrzejewski Jedrzej: Photoluminescence, Raman scattering and EPR study of Si-rich-SiOx structures ...more
30Coffee Break
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30Guided tour of Research Institutes in Berlin Adlershof
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1900Poster Session with light snacks and refreshments
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Wednesday, 12.09.2007

TimeCourtyard by Marriott
0830

"Defects in Devices I"

Invited: Julien Nagle: Defect impact and defect signatures ...more
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0900Bernd Sumpf, Ute Zeimer, Karl Häusler, Martin Zorn, Götz Erbert: Reliability and failure mechanisms of 650 nm high-power diode lasers ...more
15Manuel Avella, Matthieu Pommiès, Juan Jiménez, Alonso Martín, Pilar Iñiguez, Miriam Oudart, Julien Nagle: Study of the degradation of AlGaAs-based high-power laser bars: V defects ...more
30Stephen Bull, Jens Tomm, Eric Larkins: Identification of degradation mechanisms in high-power laser bars using by-emitter degradation studies ...more
45Dorota Pierscinska, Kamil Pierscinski, Anna Kozlowska , Maciej Bugajski, Jens W. Tomm: Spatially resolved thermoreflectance analysis of thermal processes in high power laser bars ...more
1000Coffee Break
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"Defects in Devices II"

Invited: Martin Kuball, James W. Pomeroy, Andrei Sarua, Gernot J. Riedel, Richard Simms, Hangfeng Ji, Michael J. Uren, Trevor Martin: Micro-Raman Thermography: Temperature, Defects and Time-Resolved Characteristics of Semiconductor Devices ...more
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1100Marwan Bou Sanayeh, Peter Brick, Bernd Mayer, Martin Müller, Martin Reufer, Wolfgang Schmid, Klaus Streubel, Sandy Schwirzke-Schaaf, Jens W. Tomm, Andreas Danilewsky, Gerd Bacher: Defect investigation and temperature analysis of high-power AlGaInP laser diodes during catastrophic optical damage ...more
15Karl Häusler, Ute Zeimer, Bernd Sumpf, Götz Erbert, Günther Tränkle: Degradation Model Analysis of Laser Diodes ...more
30Martina Baeumler, Joachim Wagner, F Börner, Ulrich Kretzer, Max Scheffer-Czygan, Th Bünger: Spatial variations of carrier and defect concentration in VGF GaAs:Si ...more
45Manuel AVELLA, Juan JIMENEZ, Frédéric POMMEREAU, Jean-Pierre LANDESMAN, Ahmed RHALLABI: Introduction of defects during the dry etching of InP photonic structures : a cathodo-luminescence study ...more
1200Lutz Kirste, Manfred Maier, Markus Maier, Joachim Wiegert, Klaus Köhler: SIMS depth profiling of Mg back diffusion in (AlGaIn)N light-emitting diodes ...more
15Maria Luisa Polignano, Isabella Mica, Velia Bontempo, Marcello Mariani, Aurelio Mauri, Giuseppe Pavia, Giancarlo Spoldi: The evolution of the ion implantation damage in device processing ...more
30Lunch
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1400Excursion
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1900Conference Banquet
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Thursday, 13.09.2007

TimeCourtyard by Marriott
0830

"Advanced Analytical Methods"

Invited: Tilo Baumbach: Synchrotron Imaging and Defect Recognition – ...more
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0900Takayoshi Shimura, Kohta Kawamura, Masahiro Asakawa, Heiji Watanabe, Kiyoshi Yasutake, Atsushi Ogura, Kazunori Fukuda, Osami Sakata, Shigeru Kimura, Masataka Umeno: Characterization of Strained Si Wafers by Synchrotron X-ray Microbeam and Topography ...more
15David Jacques, Paul Ryan, Keith Bowen: X-Ray Diffraction Imaging – Beyond current inspection ...more
30Kentaro Kutsukake, Noritaka Usami, Tsuyoshi Ohtaniuchi, Kozo Fujiwara, Kazuo Nakajima: Quantitative analysis of sub-grain boundaries in bulk multicrystalline silicon using spatially resolved x-ray diffraction ...more
45Paul Montgomery, Freddy Anstotz, Gyasi Johnson: Real time surface morphology analysis of semiconductor materials and devices using 4D interference microscopy ...more
1000Bernd Jenichen, Vladimir Kaganer, Roman Shayduk, Bradley Tinkham, Wolfgang Braun: Fe3Si and Ge epitaxial growth on GaAs - an in-situ study ...more
15Karsten Bittkau, Reinhard Carius, Bielawny Andreas, Wehrspohn Ralf: Influence of defects in opal photonic crystals on the optical transmission imaged by near-field scanning optical microscopy ...more
30Coffee Break
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"Wide Bandgap and II-VI-Materials"

Invited: Martin Albrecht, Thilo Remmele, Roberto Fornari, Jan Weyher, Tadeusz Wosinski, B Lucznik, Izabella Grzegory, Sylwester Porowski: Cathdoluminescence studies of single dislocations in III-Nitrides ...more
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30Bin Chen, Jun Chen, Takashi Sekiguchi, Akimasa Kinoshita, Hirofumi Matsuhata, Hirotaka Yamaguchi, Ichirou Nagai, Hajime Okumura: Electron-Beam Induced Current Study of Electrical activity of dislocations in 4H-SiC homoepitaxial films ...more
45Tetsuo Hatakeyama, Kyoichi Ichinoseki, Noboru Higuchi, Kenji Fukuda, kazuo Arai: Imaging of Surface Defects on Silicon Carbide Wafers by Laser-based Optical Surface Inspection System ...more
1200Pawel Kaminski, Roman Kozlowski, Marcin Miczuga, Michal Pawlowski, Michal Kozubal, Mariusz Pawlowski: High-resolution photoinduced transient spectroscopy of defect centers in vanadium-doped semi-insulating SiC ...more
15Changjie Zhou, Junyong Kang: Electronic structures of ZnO(0001) and (000-1) surfaces ...more
30Martin Schirra, Raoul Schneider, Anton Reiser, Günther Prinz, Martin Feneberg, Rolf Sauer, Klaus Thonke, Johannes Biskupek, Ute Kaiser: Structural origin and electronic nature of the 3.31eV band in zinc oxide epitaxial films ...more
45Kestutis Jarasiunas, A. Kadys, J.C. Launay, E. Saucedo, E. Dieguez, D. Verstraeten: Evaluation of photoelectrical properties of Bi doped CdTe crystals ...more
1300Closing Remarks
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